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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. KRX105E EPITAXIAL PLANAR NPN/PNP TRANSISTOR B FEATURES Including two devices in TESV. With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extreme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C EQUIVALENT CIRCUIT Q1 R1 C Q2 R1 R1=4.7K (Q1 , Q 2 COMMON) E C H P P B B 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) E TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 J D Type Name 4 Q2 Q1 BE 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT 2002. 1. 24 Revision No : 1 1/3 KRX105E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor ICBO IEBO hFE VCE(sat) fT * R1 ) TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1 IC=10 , IB=0.5 MIN. 120 TYP. 0.1 250 4.7 MAX. 100 100 0.3 V UNIT. SYMBOL VCE=10V, IC=5 Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor ICBO IEBO hFE ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1 IC=-10 , IB=-0.5 VCE=-10V, IC=-5 MIN. 120 TYP. -0.1 250 4.7 MAX. -100 -100 -0.3 V UNIT. SYMBOL VCE(sat) fT * R1 Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/3 KRX105E h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =5V Ta=100 C Ta=25 C Ta=-25 C Q1 V CE(sat) - I C 2 1 0.5 0.3 Q1 IC /I B =20 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =-5V Ta=100 C Ta=25 C Ta=-25 C Q2 V CE(sat) - I C -2 -1 -0.5 -0.3 Q2 IC /I B =20 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 1. 24 Revision No : 1 3/3 |
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